Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa

Grivickas, P.; McCluskey, M. D.; Gupta, Y. M.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152108
Academic Journal
Real time changes of the GaAs band structure were determined using time-resolved photoluminescence (PL) spectroscopy, with nanosecond resolution, in single-event continuous compression experiments. Continuous compression to 5 GPa over 150 ns was achieved by impacting fused silica buffers preceding the GaAs crystals. PL spectra and compression wave profiles were measured simultaneously for uniaxial strain compression along the [100] orientation. Below 3 GPa, PL peaks from Te donors and Zn acceptors showed a blueshift upon compression, consistent with a widening of the band gap. At 3 GPa, the PL intensity decreased abruptly, due to a direct-to-indirect transition.


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