Measurements of current-voltage-induced heating in the Al/SrTiO3-xNy/Al memristor during electroformation and resistance switching

Shkabko, A.; Aguirre, M. H.; Marozau, I.; Lippert, T.; Weidenkaff, A.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152109
Academic Journal
Heating of the Al/SrTiO3-xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (|V|<±3 V). Application of a threshold voltage appropriate for resistance switching (|V|≥±3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 °C. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface


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