40 Gb/s surface-illuminated Ge-on-Si photodetectors

Osmond, Johann; Vivien, Laurent; Fédéli, Jean-Marc; Marris-Morini, Delphine; Crozat, Paul; Damlencourt, Jean-François; Cassan, Eric; Lecunff, Y.
October 2009
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151116
Academic Journal
This paper reports on surface illuminated Ge photodetectors monolithically integrated on Si substrate operating in the C and L wavelength bands. The responsivity at a wavelength of 1.5 μm ranges from 0.08 to 0.21 A/W without bias voltage for Ge mesa diameter ranging from 10 to 25 μm, respectively. The measured -3 dB cut-off frequency is as high as 49 GHz under a reverse bias of 5 V at a wavelength of 1.5 μm. An open eye diagram up to 40 Gbit/s is also demonstrated.


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