TITLE

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric

AUTHOR(S)
Lichtenwalner, Daniel J.; Misra, Veena; Dhar, Sarit; Sei-Hyung Ryu; Agarwal, Anant
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p152113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. The bilayer dielectric consists of thin nitrided SiO2 covered by 25 nm of Al2O3 deposited using atomic layer deposition. Field-effect mobility and threshold voltage (VT) vary with SiC nitric oxide (NO) anneal temperature. Peak mobility of 106 cm2/V·s was obtained with corresponding VT of 0.8 V. The peak mobility decreases to 61 cm2/V·s with a lower temperature NO anneal, while the VT increased to 1.4 V. Thus with proper gate engineering, high-mobility normally off MOSFET devices can be obtained, leading to higher-performance gate-controlled power devices.
ACCESSION #
44665156

 

Related Articles

  • Liquid-Phase Catalytic Decomposition of Novel Ammonia Precursor Solutions for the Selective Catalytic Reduction of NO. Peitz, Daniel; Bernhard, Andreas; Elsener, Martin; Kröcher, Oliver // Topics in Catalysis;May2013, Vol. 56 Issue 1-8, p19 

    Aqueous solutions of NH-precursor compounds (i.e. urea and methanamide) were catalytically hydrolyzed in the liquid phase by applying a pressure of 50 bar during contact with the catalyst in a heated tube. Methanamide could be hydrolyzed on an Au/TiO catalyst to yield not only NH, but also H....

  • events.  // Chemistry in Australia;Aug2013, p42 

    A calendar of events for different areas in Australia from August 2013 to December 2013 is presented which includes the "24th Conference of Residue Chemists", the "40th International Symposium on High Performance Liquid Phase Separations and Related Techniques", and the "37th Annual Conference...

  • Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor. Lee, Si-Chen; Kau, Jau-Nan; Lin, Hao-Hsiung // Applied Physics Letters;1984, Vol. 45 Issue 10, p1114 

    The high offset voltage of an Npn AlGaAs/GaAs heterojunction bipolar transistor prepared by liquid phase epitaxy is proved to be equal to the turn-on voltage difference between emitter-base heterojunction and base-collector homojunction. The potential spike at the emitter-base heterointerface is...

  • Low-noise Ga0.47In0.53As photoconductive detectors using Fe compensation. Chen, C. Y.; Chi, G. C. // Applied Physics Letters;1984, Vol. 45 Issue 10, p1083 

    We demonstrate a low-noise Ga0.47In0.53As photoconductive detector prepared by liquid phase epitaxy using Fe compensation. A carrier concentration as low as 1.8×1013 cm-3 and a Hall mobility as high as 5390 cm2/Vs have been achieved. This has improved the noise current by 3.7 dB but reduced...

  • High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy. Suzuki, Yuichiro; Ogiwara, Shimpei; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji // Applied Physics Letters;11/12/2012, Vol. 101 Issue 20, p202105 

    High-mobility p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on germanium-on-insulator (GOI) structures formed by lateral liquid-phase epitaxy (LLPE) from the Si seed areas. It was found that appropriate rapid annealing conditions for LLPE effectively...

  • Anisotropy study of garnet films grown over substrates populated with gold nanoparticles. Lang, G.; Bowen, D.; Hung, L.; Krafft, C.; Mayergoyz, I. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07A505 

    Anisotropy of garnet films grown by liquid phase epitaxy (LPE) over (100)-oriented garnet substrates populated with gold nanoparticles is studied. The results of ferromagnetic resonance (FMR) and optical hysteresis loop measurements as well as optical images of domain structures of LPE-grown...

  • Performance of Mid-Wave Infrared HgCdTe e-Avalanche Photodiodes. Kerlain, A.; Bonnouvrier, G.; Rubaldo, L.; Decaens, G.; Reibel, Y.; Abraham, P.; Rothman, J.; Mollard, L.; De Borniol, E. // Journal of Electronic Materials;Oct2012, Vol. 41 Issue 10, p2943 

    HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in avalanche photodiodes (APDs) up to multiplication factors larger than 1000 and with close to zero excess noise. These results have opened a new horizon for low-flux and/or versatile imaging from...

  • Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy. Takuji Hosoi; Yuichiro Suzuki; Takayoshi Shimura; Heiji Watanabe // Applied Physics Letters;10/27/2014, Vol. 105 Issue 17, p1 

    High-mobility metal-oxide-semiconductor field-effect transistors (MOSFETs) consisting of stripeshaped local germanium-on-insulator (GOI) structures were fabricated by lateral liquid-phase epitaxy (LLPE). The effective hole mobility of back-gate LLPE-grown GOI MOSFETs was accurately and reliably...

  • Nano epitaxial growth of GaAs on Si (001). Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin // Applied Physics Letters;9/26/2011, Vol. 99 Issue 13, p133115 

    Nano epitaxial growth (NEG) is used to develop GaAs monolithic hetero-epitaxy onto Si (001). For the GaAs grown in a nanopatterned trench with an aspect ratio of 5, the dislocations originally generated at the GaAs/Si interface are mostly isolated by the SiO2 sidewall. Compared with the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics