Nitrogen-polar gallium nitride substrates as solid-state pH-selective potentiometric sensors

Khanh Hoa Tran Ba; Mastro, Michael A.; Hite, Jennifer K.; Eddy Jr., Charles R.; Ito, Takashi
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p142501
Academic Journal
This paper reports pH-selective potentiometric responses of epitaxial nitrogen-polar (0001) GaN films on sapphire substrates. The potential of a nitrogen-polar GaN substrate increased with decreasing solution pH from 10 to 2 in a Nernstian manner, whereas it did not significantly change upon increasing the concentrations of the cationic and anionic interfering species. In particular, the negligible responses to anions marked a sharp contrast with previously reported results on gallium-polar GaN that exhibited Nernstian responses to anions. The potentiometric response to pH probably originates from the adsorption of H+ onto oxide-coated nitrogen-polar GaN substrates having polarization-induced negative surface charge.


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