Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Tang, X.; Rousseau, M.; Dalle, C.; de Jaeger, J. C.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p142102
Academic Journal
This letter describes the analysis of GaN Gunn oscillations by means of a physical-thermal modeling based on the coupling of an energy-balance model for the description of electron transport in the active area with a thermal model for the description of the lattice temperature everywhere in the device. The most important aspect of the model is the possibility to take into account the local temperature at each point of the device and its influence on transport properties. Electric behaviors (static and microwave characterizations), as well as thermal behaviors are described, thus making it possible to optimize the device.


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