TITLE

Electrical bistabilities and carrier transport mechanisms of write-once-read-many-times memory devices fabricated utilizing ZnO nanoparticles embedded in a polystyrene layer

AUTHOR(S)
Dong Yeol Yun; Jin Ku Kwak; Jae Hun Jung; Tae Whan Kim; Dong Ick Son
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-resolution transmission electron microscopy images showed that ZnO nanoparticles were randomly distributed in a polystyrene (PS) layer. Current-voltage (I-V) curves at 300 K for Al/ZnO nanoparticles embedded in PS layer/indium tin oxide devices showed a current bistability with a large ON/OFF ratio of 103 for write-once-read-many-times (WORM) memory devices. The estimated retention time of the ON state for the WORM device was more than 10 years. The carrier transport mechanisms for the WORM memory device are described on the basis of the I-V results.
ACCESSION #
44539731

 

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