Electroluminescence and structural characteristics of InAs/In0.1Ga0.9As quantum dots grown on graded Si1-xGex/Si substrate

Tanoto, H.; Yoon, S. F.; Lew, K. L.; Loke, W. K.; Dohrman, C.; Fitzgerald, E. A.; Tang, L. J.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p141905
Academic Journal
We studied the electroluminescence and structural characteristics of five-layer stacked self-assembled InAs/In0.1Ga0.9As quantum dot (QD) structures grown on graded Si1-xGex/Si substrate. The QD was found to take on a lens shaped structure with aspect ratio of 0.23±0.05. Room-temperature electroluminescence at 1.29 μm was observed from the QD structures. The external quantum efficiency as function of injected current was investigated and the dominant carrier recombination processes were identified from analysis of the current-optical power relationship.


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