Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices

Martin, M.; Mangeney, J.; Travers, L.; Minot, C.; Harmand, J. C.; Mauguin, O.; Patriarche, G.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p141910
Academic Journal
We study GaInAs/GaInNAs superlattice structures grown on InP substrate as potential candidates for photoconductive terahertz devices or saturable absorbers working at 1.55 μm wavelength. The N-rich GaInNAs layers are flat, with no three-dimensional islanding, and act as trapping layers where carriers can recombine rapidly. The carrier lifetime in GaInAs/GaInNAs superlattice was measured for various growth parameters using time-resolved differential transmission experiments at 1.55 μm wavelength. The carrier lifetime is found to depend strongly on N content and can be reduced down to 3.8 ps for samples with 14% of N. The mechanisms involved in the capture process of photocarriers are discussed.


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