TITLE

Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices

AUTHOR(S)
Martin, M.; Mangeney, J.; Travers, L.; Minot, C.; Harmand, J. C.; Mauguin, O.; Patriarche, G.
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p141910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We study GaInAs/GaInNAs superlattice structures grown on InP substrate as potential candidates for photoconductive terahertz devices or saturable absorbers working at 1.55 μm wavelength. The N-rich GaInNAs layers are flat, with no three-dimensional islanding, and act as trapping layers where carriers can recombine rapidly. The carrier lifetime in GaInAs/GaInNAs superlattice was measured for various growth parameters using time-resolved differential transmission experiments at 1.55 μm wavelength. The carrier lifetime is found to depend strongly on N content and can be reduced down to 3.8 ps for samples with 14% of N. The mechanisms involved in the capture process of photocarriers are discussed.
ACCESSION #
44539702

 

Related Articles

  • Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1-xN thin films. Gorge, V.; Djebbour, Z.; Migan-Dubois, A.; Pareige, C.; Longeaud, C.; Pantzas, K.; Moudakir, T.; Gautier, S.; Orsal, G.; Voss, P. L.; Ougazzaden, A. // Applied Physics Letters;8/8/2011, Vol. 99 Issue 6, p062113 

    We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail...

  • Nonradiative lifetimes in intermediate band photovoltaics-Absence of lifetime recovery. Krich, Jacob J.; Halperin, Bertrand I.; Aspuru-Guzik, Alán // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p013707 

    Intermediate band photovoltaics hold the promise of being highly efficient and cost effective photovoltaic cells. Intermediate states in the band gap, however, are known to facilitate nonradiative recombination. Much effort has been dedicated to producing metallic intermediate bands in hopes of...

  • A simple and efficient low-temperature sample cell for infrared spectrophotometry. Bruno, Thomas J. // Review of Scientific Instruments;Oct92, Vol. 63 Issue 10, p4459 

    It is often helpful in infrared spectrophotometry to contain a liquid sample in a cell that is maintained at a subambient or nearly cryogenic temperature. Volatile samples and solvents being studied can vaporize and form bubbles in conventional liquid sample cells, especially under the influence...

  • The form of the profile of heterointerfaces in (311)Ga GaAs/AlAs structures. Gulyaev, D. V.; Zhuravlev, K. S. // Semiconductors;Mar2010, Vol. 44 Issue 3, p341 

    The steady-state photoluminescence and kinetics of photoluminescence of the (100)-oriented and (311)Ga-oriented type II GaAs/AlAs superlattices are studied under the effect of the electric field of the surface acoustic wave. It is found that, in the (100)-oriented structures, the drop of...

  • InGaN laser diodes with 50 mW output power emitting at 515 nm. Avramescu, Adrian; Lermer, Teresa; Müller, Jens; Tautz, Sönke; Queren, Désirée; Lutgen, Stephan; Strauß, Uwe // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p071103 

    We demonstrate direct green laser operation from InGaN based diodes at wavelengths as long as 515.9 nm with 50 mW output power in pulse operation. A factor of ∼10 defect reduction for the In-rich InGaN quantum wells based on improvements of the epitaxial growth process and design of the...

  • Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy. Pinos, A.; Liuolia, V.; Marcinkevičius, S.; Yang, J.; Gaska, R.; Shur, M. S. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113516 

    Scanning near-field photoluminescence spectroscopy has been applied to evaluate bandgap fluctuations in epitaxial AlGaN films with the AlN molar fraction varying from 0.30 to 0.50. A dual localization pattern has been observed. The potential of the small-scale (<100 nm) localization, evaluated...

  • A 2600-K tantalum cavity as an interesting infrared source for absorbance measurements. Maseri, F.; Philippe, L.; Derycke, I.; Darville, J.; Vigneron, J. P.; Gilles, J. M. // Review of Scientific Instruments;Aug1993, Vol. 64 Issue 8, p2160 

    A design is proposed for a stable infrared source suited to absorbance measurements. The source is a parallelepipedic cavity of tantalum, heated to 2600 K, with an apparent emissivity in excess of 0.7. It is observed to be three times brighter at 3000 cm[sup -1] than the 1440-K SiC bar. A model...

  • Photothermal beam deflection spectroscopy using solid deflection media (abstract). Gillikin, A. M.; Palmer, R. A. // Review of Scientific Instruments;Jan2003, Vol. 74 Issue 1, p350 

    Photothermal beam deflection (PTBD) is a useful tool for measuring absorbance spectra, particularly of nontransparent and poorly reflective samples. Unfortunately, the optical alignment for such measurements is often time consuming and difficult to reproduce. The desire for a permanently aligned...

  • Use of differential spectroscopy to evaluate the structure and reactivity of humics. Korshin, Gregory V.; Benjamin, Mark M.; Ch-Wang Li // Water Science & Technology;1999, Vol. 40 Issue 9, p9 

    Explores the usefulness of differential absorbance spectroscopy as a tool for monitoring transformations in the chemical state of humic species (HS). Applications of differential absorbance spectroscopy in studies of HS halogenation; Nature of halogen attack sites.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics