Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Kandaswamy, P. K.; Machhadani, H.; Bougerol, C.; Sakr, S.; Tchernycheva, M.; Julien, F. H.; Monroy, E.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p141911
Academic Journal
We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 μm. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.


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