Phase transitions in Ge–Te phase change materials studied by time-resolved x-ray diffraction

Raoux, Simone; Muñoz, Becky; Huai-Yu Cheng; Jordan-Sweet, Jean L.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143118
Academic Journal
Resistivity versus temperature measurements and time-resolved x-ray diffraction were used to study Ge–Te phase change materials. Resistivity versus temperature measurements showed one sharp drop in resistivity for films with 30, 50, and 70 at. % Ge, two steps for films with 40 at. % Ge, and a gradual transition for films with 60 at. % Ge. Films with 30, 50, and 70 at. % Ge crystallized in a single-step process with GeTe and Te, only GeTe, and GeTe and Ge diffraction peaks, respectively. Films with 40 and 60 at. % Ge crystallized in a two-step process with GeTe peaks appearing first and additional Te or Ge peaks, respectively, appearing at higher temperature.


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