Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes

Bain, S.; Smith, D. C.; Wilson, N. R.; Carrasco-Orozco, M.
October 2009
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143304
Academic Journal
Kelvin force gradient microscopy of pBTTT transistors biased in both the linear and saturation electrical regimes is presented. The linear regime potential profiles are dominated by the contacts and the true material mobility, 0.11±0.01 cm2 V-1 s-1, is ten times higher than that derived from device electrical characteristics. In the saturation regime the potential profiles are well fitted by a simple model assuming a very weakly gate potential dependent mobility in the range 0.021–0.028 cm2 V-1 s-1. These measurements indicate that contrary to the conclusion drawn from the device electrical characteristics, the linear mobility is larger than the saturation mobility.


Related Articles

  • Cross-coupled gates prevent push-pull-driver overlap. Rice, Richard // EDN;5/15/2008, Vol. 53 Issue 10, p68 

    The article presents a Design Idea that uses cross-coupled gates to prevent push-pull-driver overlap. Overlap refers to the short period during which a push-pull drive's transistors are both simultaneously on. Overlap is a common problem which causes a large current spike and increased switching...

  • Harris Semi unveils arrays for RF mixers, amplifiers.  // Electronic News;4/25/94, Vol. 40 Issue 2011, p60 

    Reports on Harris Semiconductor's release of the HFA3101 silicon Gilbert Cell transistor array chip. Application circuits; Simultaneous release of the SP721 electronic protection array; Voltage issues; Prices.

  • Exploring the link between nanotechnology and metrology.  // Solid State Technology;Sep2003, Vol. 46 Issue 9, p63 

    Examines the link between nanotechnology and metrology in the U.S. Role of nanotechnology in the development of transistor operation; Representation of molecular electronics; Ability of the microscopy to provide a view of the switching process; Differences seen in the optical properties of very...

  • Let There Be Light. Buetow, Mike // Printed Circuit Design & Manufacture;Mar2004, Vol. 21 Issue 3, p64 

    Provides information on light-emitting transistors (LET). Inventors of LET; Comments from Nick Holonyak Junior, co-creator of LET on the discovery of the transistor; Applications of LET; Comparison between an ordinary transistor and a LET; Advantages and benefits provided by the invention of LET.

  • TRANSISTOR SWITCHES WITH A SINGLE ELECTRON.  // Design News;10/22/90, Vol. 46 Issue 20, p15 

    The article reports on the type of transistor that can turn on or off with the addition of a single electron. The researchers do not yet have a solid understanding of how the device works but the they explain that by forcing the electrons through a narrow channel, they can cause the transistor...

  • Pass That CEO a Pocket Protector. Braune, Bernd // Electronic News;7/2/2001, Vol. 47 Issue 27, p35 

    Discusses the implications of the proliferation of silicon content in electronic chip design. Factors to be considered by chief executive officers; Assessment on the design costs for a transistor chip; Changes in semiconductor designs.

  • One-transistor circuits. Rakes, Charles D. // Popular Electronics;Dec95, Vol. 12 Issue 12, p77 

    Presents single-transistor circuits. Voltage regulator; Constant-current source; Simple audio amplifier; Impedance-matching circuit; Light emitting diode (LED) control circuits; Relay driver circuit with contact activated latching function.

  • Circuit optimizes phototransistor bandwidth. Magliocco, David; Travis, Bill; Watson Swager, Anne // EDN;04/09/98, Vol. 43 Issue 8, p118 

    Focuses on a circuit which can improve the dynamic performance of a phototransistor in medium speed applications. Dynamic behavior of phototransistors; Equation which computes the rise and fall time of a phototransistor; Getting the best of a phototransistor's bandwidth.

  • Linear triangle-wave generator. Jabillo, Edwin C.; Danz, George // Electronic Design;3/18/96, Vol. 44 Issue 6, p118 

    Reports on the controlling of the output of a high-frequency full bridge driver, by setting the switching frequency and creating a pulse-width modulation signal in a class-D amplifier. Goals of procedure; What integrator circuit consist of; How frequency is determined.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics