TITLE

Use of AlGaN in the notch region of GaN Gunn diodes

AUTHOR(S)
Linan Yang; Yue Hao; Jincheng Zhang
PUB. DATE
October 2009
SOURCE
Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p143507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The wurtzite gallium nitride (GaN) Gunn diodes with aluminum gallium nitride (AlGaN) as launcher in the notch region are investigated by negative-differential-mobility model based simulation. Under the operation of self-excitation oscillation with dipole domain mode, the simulations show that the diode with two-step-graded AlGaN launcher structure can yield the maximal rf power of 1.95 W and dc/rf conversion efficiency of 1.72% at the fundamental oscillation frequency of around 215 GHz. This kind of Gunn diode structure without the low doping process is convenient for accurately controlling the dopant concentration of GaN epitaxial growth.
ACCESSION #
44539667

 

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