18.9% efficient full area laser doped silicon solar cell

Eisele, S. J.; Röder, T. C.; Köhler, J. R.; Werner, J. H.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133501
Academic Journal
A record in full area laser doped emitter solar cells with an efficiency η=18.9% is reported. Our patented, scanned laser doping process allows for the fabrication of defect free pn junctions via liquid state diffusion of predeposited dopant layers in ambient atmosphere without the need of clean room conditions. Our cells display an open circuit voltage Voc=677 mV, demonstrating laser doping to be comparable to furnace diffusion. Combining laser diffused pn junctions with a textured front side has the potential to boost the short circuit current density Jsc and thus the solar cell efficiency η to η>21%.


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