Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices

Wei-Chen Chen; Horng-Chih Lin; Yu-Chia Chang; Tiao-Yuan Huang
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133502
Academic Journal
A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications.


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