GaN and InGaN(112_2) surfaces: Group-III adlayers and indium incorporation

Northrup, John E.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133107
Academic Journal
First-principles calculations for clean and In-rich GaN(112_2) surfaces indicate that indium will, for the same indium chemical potential, incorporate in higher concentrations on the (112_2) surface than on the (101_0) surface. Because In atoms are larger than Ga atoms, there is a strain-induced repulsive interaction between incorporated In atoms on the surface. This interaction is weaker on the (112_2) surface in comparison to the (101_0) surface.


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