Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

Renard, J.; Kandaswamy, P. K.; Monroy, E.; Gayral, B.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p131903
Academic Journal
We present a temperature-dependent time-resolved photoluminescence study of the nonradiative processes in polar GaN/AlN quantum dots and quantum wells. The photoluminescence decay times of quantum wells drop above 50 K due to the presence of nonradiative recombination centers. In contrast, the three-dimensional carrier confinement in quantum dots efficiently suppresses nonradiative processes up to room temperature, even for radiative decay times reaching the microsecond range.


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