Current-controlled magnetoresistance in silicon in non-Ohmic transport regimes

Delmo, Michael P.; Kasai, Shinya; Kobayashi, Kensuke; Ono, Teruo
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132106
Academic Journal
We show that the large positive magnetoresistance in nonmagnetic silicon devices can be controlled by a current applied in the non-Ohmic transport regime. The experimental results indicate that the carrier transport in this regime is dominated by the space-charge effect, where the magnetoresistance effect is greatly enhanced. We propose a device concept based on the space-charge-induced magnetoresistance effect in silicon that is controlled by both the current and the magnetic field, which looks similar to the characteristics of the field-effect transistors.


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