TITLE

Band alignment and electron traps in Y2O3 layers on (100)Si

AUTHOR(S)
Wang, W. C.; Badylevich, M.; Afanas’ev, V. V.; Stesmans, A.; Adelmann, C.; Van Elshocht, S.; Kittl, J. A.; Lukosius, M.; Walczyk, Ch.; Wenger, Ch.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Y2O3 films deposited by atomic vapor deposition on (100)Si with a 2 or 5 nm thick pregrown thermal SiO2 are investigated as possible charge trapping layers. Analysis of these structures using spectroscopic ellipsometry, photoconductivity, and internal photoemission reveals that Y2O3 has a 5.6 eV wide optical bandgap and a 2.0 eV conduction band offset with silicon. Photo(dis)charging experiments show that the optical energy depth of most of the traps exceeds 1.5 eV with respect to the Y2O3 conduction band, explaining the observed charge retention time of ∼108 s at room temperature, even in the absence of a blocking insulator.
ACCESSION #
44449145

 

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