Band alignment and electron traps in Y2O3 layers on (100)Si

Wang, W. C.; Badylevich, M.; Afanas’ev, V. V.; Stesmans, A.; Adelmann, C.; Van Elshocht, S.; Kittl, J. A.; Lukosius, M.; Walczyk, Ch.; Wenger, Ch.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132903
Academic Journal
Y2O3 films deposited by atomic vapor deposition on (100)Si with a 2 or 5 nm thick pregrown thermal SiO2 are investigated as possible charge trapping layers. Analysis of these structures using spectroscopic ellipsometry, photoconductivity, and internal photoemission reveals that Y2O3 has a 5.6 eV wide optical bandgap and a 2.0 eV conduction band offset with silicon. Photo(dis)charging experiments show that the optical energy depth of most of the traps exceeds 1.5 eV with respect to the Y2O3 conduction band, explaining the observed charge retention time of ∼108 s at room temperature, even in the absence of a blocking insulator.


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