Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

Chen, Y. Z.; Sun, J. R.; Zhao, T. Y.; Wang, J.; Wang, Z. H.; Shen, B. G.; Pryds, N.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132506
Academic Journal
The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [formula]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both directions was observed with the appearance of magnetic-field-induced metal-insulator transition, which further led to a sign crossover in the AMR effect. The AMR crossover may give a direct evidence of the drastic modification of electronic structure or possible orbital reconstruction with the magnetic-destruction of charge/orbital ordering in SCMO films.


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