TITLE

Piezoresistive transduction in multilayer polycrystalline silicon resonators

AUTHOR(S)
Cross, J. D.; Ilic, B. R.; Zalalutdinov, M. K.; Zhou, W.; Baldwin, J. W.; Houston, B. H.; Craighead, H. G.; Parpia, J. M.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate piezoresistive transduction of mechanical motion from out-of-plane flexural micromechanical resonators made from stacked thin films. The resonators are fabricated from two highly doped polycrystalline silicon layers separated by an interlayer dielectric. We examine two interlayer materials: thermal silicon dioxide and stoichiometric silicon nitride. We show that via one-time dielectric breakdown, the film stack functions as a vertical piezoresistor effectively transducing the motion of the resonators. We obtain a gauge factor of ∼5, which is sufficient to detect the resonator motion. The simple film stack constitutes a vertically oriented piezoresistor that is readily integrated with micro- and nanoscale resonators.
ACCESSION #
44449129

 

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