Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

Adamopoulos, George; Bashir, Aneeqa; Wöbkenberg, Paul H.; Bradley, Donal D. C.; Anthopoulos, Thomas D.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133507
Academic Journal
We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10–22 cm2/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.


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