Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Chang, H.-Y.; Tsybeskov, L.; Sharma, S.; Kamins, T. I.; Wu, X.; Lockwood, D. J.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133120
Academic Journal
In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements.


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