Photon-number resolving performance of the InGaAs/InP avalanche photodiode with short gates

Xiuliang Chen; E Wu; Lilin Xu; Yan Liang; Guang Wu; Heping Zeng
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p131118
Academic Journal
By using a self-differencing circuit to achieve efficient spike cancellation for the near-infrared single-photon detector based on InGaAs/InP avalanche photodiode, we verified that shortening the gate duration enforced the detection efficiency to saturate at an increased voltage, while increasing the avalanche gain favored the discrimination of the avalanche signals caused by different photon-number states. Photon-number resolving detection was realized by measuring the weak current at the avalanche built-up. The photon-number resolving performance could be improved by shortening the gating pulse duration.


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