TITLE

Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions

AUTHOR(S)
Jen-Yi Wang; Chun-Yu Lee; Yung-Ting Chen; Chung-Tse Chen; Yung-Ling Chen; Ching-Fuh Lin; Yang-Fang Chen
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p131117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously.
ACCESSION #
44449105

 

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