Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions

Jen-Yi Wang; Chun-Yu Lee; Yung-Ting Chen; Chung-Tse Chen; Yung-Ling Chen; Ching-Fuh Lin; Yang-Fang Chen
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p131117
Academic Journal
Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously.


Related Articles

  • Improved and color tunable electroluminescence from n-ZnO/HfO2/p-GaN heterojunction light emitting diodes. Huang, Huihui; Fang, Guojia; Li, Yuan; Li, Songzhan; Mo, Xiaoming; Long, Hao; Wang, Haoning; Carroll, David L.; Zhao, Xingzhong // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p233502 

    n-ZnO/HfO2/p-GaN based heterojunction light emitting diodes were fabricated using a radio frequency magnetron sputtering system. The electroluminescence measurements revealed that dominant violet emissions centered at around 415 nm were emitted and improved performances were observed for the...

  • Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy. Xie, Zhang-Yi; Lu, Hong-Liang; Xu, Sai-Sheng; Geng, Yang; Sun, Qing-Qing; Ding, Shi-Jin; Wei Zhang, David // Applied Physics Letters;12/17/2012, Vol. 101 Issue 25, p252111 

    X-ray photoelectron spectroscopy was utilized to determine the valence band offset (ΔEV) of the InGaZnO4 (IGZO)/Si heterojunction. The IGZO films were grown on Si (100) using radio frequency magnetron sputtering. A value of ΔEV = 2.53 eV was obtained by using In 3d5/2, Ga 2p3/2 core...

  • Band alignment at the InS/CuZnSnS heterojunction interface investigated by X-ray photoemission spectroscopy. Lin, Lingyan; Yu, Jinling; Cheng, Shuying; Lu, Peimin; Lai, Yunfeng; Lin, Sile; Zhao, Pengyi // Applied Physics A: Materials Science & Processing;Sep2014, Vol. 116 Issue 4, p2173 

    The band alignment at the InS/CuZnSnS heterojunction interface is investigated by X-ray photoemission spectroscopy. InS is thermally evaporated onto the contamination-free polycrystalline CuZnSnS surface prepared by magnetron sputtering. The valence band offset is measured to be 0.46 ± 0.1...

  • Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes. Xu, H.; Liu, Y.; Xu, C.; Shao, C.; Mu, R. // Applied Physics B: Lasers & Optics;Jun2005 Part 1, Vol. 80 Issue 7, p871 

    In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The...

  • Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes. Hao Long; Guojia Fang; Huihui Huang; Xiaoming Mo; Wei Xia; Binzhong Dong; Xianquan Meng; Xingzhong Zhao // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013509 

    Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼370 nm with a full-width at half maximum of ∼7 nm was...

  • Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer. Huang, Huihui; Fang, Guojia; Mo, Xiaoming; Long, Hao; Wang, Haoning; Li, Songzhan; Li, Yuan; Zhang, Yupeng; Pan, Chunxu; Carroll, David L. // Applied Physics Letters;11/26/2012, Vol. 101 Issue 22, p223504 

    n-ZnO/p-Si heterojunction light emitting devices with and without a NiO intermediate layer were fabricated using a radio frequency magnetron sputtering system. Electroluminescence measurements revealed that the device with the NiO intermediate layer exhibits a sharper and stronger orange...

  • Ultraviolet electroluminescence from n-ZnO/ i-MgO/p-GaN heterojunction light-emitting diodes fabricated by RF-magnetron sputtering. Zhu, G.; Li, J.; Shi, Z.; Lin, Y.; Chen, G.; Ding, T.; Tian, Z.; Xu, C. // Applied Physics B: Lasers & Optics;Nov2012, Vol. 109 Issue 2, p195 

    Based on the easily controllable radio frequency magnetron sputtering, n-ZnO and i-MgO thin films were fabricated on p-GaN substrate to construct heterojunctional light-emitting diodes for ultraviolet emission from the near band edge exciton recombination of ZnO. Effects of the insulator MgO...

  • Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy. Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Adam, Thomas; Kolodzey, James // Applied Physics Letters;6/24/2013, Vol. 102 Issue 25, p251117 

    Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV...

  • Light Emission From Nanoscale Silicon Heterojunctions. Kuzmin, Roman; Bargaev, Nikolay; Klyachkin, Leonid; Malyarenko, Anna; Mashkov, Vladimir // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p468 

    The planar p+-n silicon heterojunctions are under study. The forward bias applied appears to result in the visible white light emission from p+ wide-band-gap nanostructured layer and the intensive infrared electroluminescence from the heterointerface between this nanostructured layer and the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics