Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature

Miao, J.; Xu, X. G.; Jiang, Y.; Cao, L. X.; Zhao, B. R.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132905
Academic Journal
Ferroelectric K0.5Na0.5NbO3 (KNN) thin film was epitaxially grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrate by pulse laser deposition. The crystallographic structure of KNN/LSMO was confirmed by x-ray diffraction. Interestingly, a dielectric relaxor feature was found in the temperature range 200–350 °C. The activation energies for relaxation and conduction of the films were found to be 1.87 and 0.63–0.71 eV, respectively. The mechanism for dielectric relaxation in KNN/LSMO structure was discussed under a thermally activated process. The remnant polarization and coercive field of the films were 21.3 μC/cm2 and 91 kV/cm, respectively.


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