TITLE

Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature

AUTHOR(S)
Miao, J.; Xu, X. G.; Jiang, Y.; Cao, L. X.; Zhao, B. R.
PUB. DATE
September 2009
SOURCE
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p132905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferroelectric K0.5Na0.5NbO3 (KNN) thin film was epitaxially grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrate by pulse laser deposition. The crystallographic structure of KNN/LSMO was confirmed by x-ray diffraction. Interestingly, a dielectric relaxor feature was found in the temperature range 200–350 °C. The activation energies for relaxation and conduction of the films were found to be 1.87 and 0.63–0.71 eV, respectively. The mechanism for dielectric relaxation in KNN/LSMO structure was discussed under a thermally activated process. The remnant polarization and coercive field of the films were 21.3 μC/cm2 and 91 kV/cm, respectively.
ACCESSION #
44449102

 

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