Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography

Wai Yuen Fu; Kenneth Kin-Yip Wong; H. W. Choi
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133125
Academic Journal
A self-assembled hexagonal close-packed hemiellipsoidal photonic crystal structure was fabricated on GaN material. An ordered monolayer silica nanosphere coating served as a hard mask in an inductively coupled plasma etching process. The shape of the arrayed hemiellipsoids can be controlled by adjusting the etch selectivities and durations according to the fabrication model. The existence of a photonic band gap is established through planar transmissivity measurement whereby a transmission dip centered at 440 nm was identified. A threefold enhancement in light extraction was achieved, as determined from the measured angular photoluminescence emission pattern.


Related Articles

  • Plasma-induced damage to n-type GaN. Choi, H. W.; Choi, H.W.; Chua, S. J.; Chua, S.J.; Raman, A.; Pan, J. S.; Pan, J.S.; Wee, A. T. S.; Wee, A.T.S. // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the...

  • Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback. Martin, R. W.; Edwards, P. R.; Kim, H.-S.; Kim, K.-S.; Kim, T.; Watson, I. M.; Dawson, M. D.; Cho, Y.; Sands, T.; Cheung, N. W. // Applied Physics Letters;11/5/2001, Vol. 79 Issue 19, p3029 

    The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial...

  • Nanobox array for silicon-on-insulator luminescence enhancement at room temperature. Cluzel, B.; Pauc, N.; Calvo, V.; Charvolin, T.; Hadji, E. // Applied Physics Letters;3/27/2006, Vol. 88 Issue 13, p133120 

    We report the light extraction enhancement obtained at room temperature from a square lattice of crystalline silicon nanoboxes etched in a silicon-on-insulator substrate. Luminescence spectra recorded under optical pumping show a 125 times emission enhancement as compared with the reference...

  • Inductively coupled plasma etching of GaN using Cl.../Ar and Cl.../N... gases. Sheu, J. K.; Su, Y. K. // Journal of Applied Physics;2/1/1999, Vol. 85 Issue 3, p1970 

    Presents information on a study which investigated inductively coupled plasma etching processes of gallium nitride. Experimental procedure; Results and discussion; Conclusions.

  • High etch rates of GaN with magnetron reactive ion etching in BCl[sub 3] plasmas. McLane, G.F.; Casas, L. // Applied Physics Letters;6/12/1995, Vol. 66 Issue 24, p3328 

    Investigates the magnetron reactive ion etching of gallium nitride in boron chlorite plasmas. Correlation of etch rate and cathode bias voltage to cathode power density; Analysis of the etched surfaces by electron spectroscopy measurement; Suitability of magnetron dry etching for photonic...

  • Unusual luminescence lines in GaN. Reshchikov, M. A.; Huang, D.; Yun, F.; Visconti, P.; He, L.; MorkoƧ, H.; Jasinski, J.; Liliental-Weber, Z.; Molnar, R.J.; Park, S.S.; Lee, K.Y. // Journal of Applied Physics;11/1/2003, Vol. 94 Issue 9, p5623 

    A series of sharp intense peaks was observed in the low-temperature photoluminescence spectrum of unintentionally doped GaN in the photon energy range between 3.0 and 3.46 eV. We attributed the majority of these peaks to excitons bound to unidentified structural and surface defects. Most of the...

  • Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography. Li, K. H.; Ma, Zetao; Choi, H. W. // Applied Physics Letters;4/2/2012, Vol. 100 Issue 14, p141101 

    The fabrication of close-packed clover-shaped photonic crystal structure on GaN by dual-step nanosphere lithography is demonstrated. By shrinkage of spheres prior to pattern transfer, a non-closed-packed clover-shaped photonic bandgap (PBG) structure, as designed by modified 3D finite-difference...

  • Room temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithography. Fu, Wai Yuen; Wong, Kenneth Kin-Yip; Choi, H. W. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063104 

    An ordered GaN nanopillar array fabricated by nanosphere lithography exhibited room temperature photopumped lasing via the photonic crystal band-edge effect. With a monolayer of self-assembled nanospheres as hard mask, the ordered pattern was transferred to the sample to form nanopillars by...

  • Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography. Li, K. H.; Choi, H. W. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 2, p023107 

    We report on the fabrication of ordered hexagonal arrays of air-spaced GaN nanopillars by nanosphere lithography. A self-assembled two-dimensional silica nanosphere mask was initially formed by spin-coating. Prior to pattern transfer to the GaN substrate, a silica-selective dry etch recipe was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics