Electron conductance of N,N′-bis-(1-naphthl)-diphenyl- 1,1′-biphenyl-4,4′-diamine at low temperatures

Gao, X. D.; He, Y.; Zhang, S. T.; Yin, X. R.; Ding, B. F.; Ding, X. M.; Hou, X. Y.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133306
Academic Journal
The electron conductance of N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine was found to increase with decreasing temperature experimentally. This phenomenon is quite abnormal since for most organic materials the conductance increases with increasing temperature. A probable explanation was given according to a previous work about soliton diffusion in polyacetylene within the framework of SSH model.


Related Articles

  • Numerical study of the current conduction in single-layer organic light-emitting devices. Peng, Y. Q.; Zhang, F. J.; Zhang, X.; Zheng, D. S. // Applied Physics A: Materials Science & Processing;2004, Vol. 78 Issue 3, p369 

    A numerical model for the current conduction in single-layer organic light-emitting devices is established under the basis of trapped charge-limited conduction with an exponential trap distribution. The dependences of the current density on the operation voltage, the thickness of the organic...

  • Monolithic n-type conductivity on low temperature grown freestanding ultrananocrystalline diamond films. Joseph, P. T.; Tai, N. H.; Lin, I. N. // Applied Physics Letters;7/26/2010, Vol. 97 Issue 4, p042107 

    We report monolithic n-type conductivity on low-temperature (<570 °C) grown ultrananocrystalline diamond (UNCD) films by Li-diffusion (about 255 nm) from LiNbO3 substrates. Low resistivity of 1.2 Ω cm with carrier concentration of -2×1020 cm-3 is obtained on freestanding UNCD films....

  • Amplitude of Aharonov�Bohm Oscillations in a Small Semiconductor Ring Interferometer in the Tunneling Regime. Nomokonov, D. V.; Bykov, A. A. // JETP Letters;7/25/2005, Vol. 82 Issue 2, p89 

    The amplitude gAB of Aharonov�Bohm oscillations in a small semiconductor ring interferometer is studied as a function of the average conductance GAV . Experimentally, it is found that, in the tunneling regime, the relative amplitude gAB/GAV of h/e oscillations is constant in the rings under...

  • Dynamic conductivity of a layered conductor in the quantum limit. Gokhfel'd, V. M. // JETP Letters;Oct2007, Vol. 86 Issue 4, p249 

    The high-frequency conductivity of a layered conductor in the direction orthogonal to the layers is analytically calculated with the use of the model of a quasi-two-dimensional electron spectrum in the limit of strong magnetic fields ( H) and low temperatures. It is shown that the conductivity...

  • Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas. Sherstobitov, A. A.; Minkov, G. M.; Rut, O. É.; Germanenko, A. V.; Zvonkov, B. N.; Uskova, E. A.; Biryukov, A. A. // Semiconductors;Jun2003, Vol. 37 Issue 6, p705 

    Dependences of electrical conductivitys on temperature and electric-field strength were studied in a wide range of conductivities (from σ ≪e[SUP2]/ħ to σ ≫ e[SUP2]/ ħ) in GaAs/InGaAs/GaAs structures with a two-dimensional electron gas. It is shown that one cannot reliably...

  • Manifestation of ageing in the low temperature conductance of disordered insulators. Grenet, T.; Delahaye, J. // European Physical Journal B -- Condensed Matter;Jul2010, Vol. 76 Issue 2, p229 

    We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy...

  • Suppression of the differential-tunnelling-conductance peak of a phase-coherent two-layer system by means of thermal fluctuations. Bezuglyi, A. I. // Low Temperature Physics;Oct2005, Vol. 31 Issue 10, p880 

    A high, narrow, interlayer differential-tunnelling-conductance peak is observed at low temperatures in semiconductor heterostructures with two close-lying electron layers. This peak is the consequence of the interlayer phase coherence established in the system by Bose condensation of interlayer...

  • Electrical properties of bilayer heterojunctions in a strong magnetic field. Guk, N. D.; Iordanskii, S. V. // JETP Letters;Jul2010, Vol. 91 Issue 10, p523 

    The electrical properties of bilayer heterojunctions in a strong magnetic field at low temperatures have been considered. It has been shown that both the ohmic and Hall conductivities decrease exponentially due to the formation of neutral pairs if the electric fields in the two layers are...

  • Quantum transport studies of grain boundaries in p-Hg1-xMnxTe. Grabecki, G.; Dietl, T.; Sobkowicz, P.; Kossut, J.; Zawadzki, W. // Applied Physics Letters;1984, Vol. 45 Issue 11, p1214 

    We show that charged traps at grain boundaries in p-Hg1-xMnxTe lead to the formation of an inversion layer. The layers are dominant channels of electrical conductivity at low temperatures. By means of the Shubnikov-de Haas effect measurements we demonstrate that the electron gas in the layer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics