Ultraviolet emission from a ZnO rod homojunction light-emitting diode

Sun, X. W.; Ling, B.; Zhao, J. L.; Tan, S. T.; Yang, Y.; Shen, Y. Q.; Dong, Z. L.; Li, X. C.
September 2009
Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133124
Academic Journal
Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P-doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p-type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.


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