Selecting a single orientation for millimeter sized graphene sheets

van Gastel, R.; N'Diaye, A. T.; Wall, D.; Coraux, J.; Busse, C.; Buckanie, N. M.; Meyer zu Heringdorf, F.-J.; Horn von Hoegen, M.; Michely, T.; Poelsema, B.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121901
Academic Journal
We have used low energy electron microscopy and photo emission electron microscopy to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields graphene sheets that are uniform and of monatomic thickness. Besides domains that are aligned with respect to the substrate, other rotational variants grow. Cyclic growth exploiting the faster growth and etch rates of the rotational variants, yields films that are 99% composed of aligned domains. Precovering the substrate with a high density of graphene nuclei prior to CVD yields pure films of aligned domains extending over millimeters. Such films can be used to prepare cluster-graphene hybrid materials for catalysis or nanomagnetism and can potentially be combined with lift-off techniques to yield high-quality, graphene based, electronic devices.


Related Articles

  • Synthesis of High-Density Vertically Aligned Carbon Nanotubes Using Ultrasonic Nebulizer. Jianhui Zhang; Wei Li; Soga, Tetsuo; Jimbo, Takashi; Tanji, Takayoshi // Materials Sciences & Applications;Apr2012, Vol. 3 Issue 4, p213 

    Vertically aligned carbon nanotubes (VACNTs) array with high density have been synthesized from a mixture of ferrocene and ethanol using ultrasonic nebulizer techniques. Using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) as well as Raman spectroscopy,...

  • Toward epitaxially grown two-dimensional crystal hetero-structures: Single and double MoS2/graphene hetero-structures by chemical vapor depositions. Meng-Yu Lin; Chung-En Chang; Cheng-Hung Wang; Chen-Fung Su; Chi Chen; Si-Chen Lee; Shih-Yen Lin // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    Uniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of...

  • Mechanism of vertical correlation in Ge/Si(001) islands multilayer structures by chemical vapor deposition. Yam, V.; Débarre, D.; Bouchier, D.; Laval, J.-Y. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p113504 

    The aim of this paper is to study the mechanism of vertical correlation of Ge/Si(001) islands in multilayered structures grown by ultrahigh vacuum chemical vapor deposition. We used in situ reflexion high energy electron diffraction, ex situ atomic force microscopy, photoluminescence...

  • Growth of triangular shaped InGaAs/GaAs quantum wire structures. Kim, Seong-Il; Han, Il-Ki; Chung, Sang Wook; Jagadish, C. // Journal of Materials Science Letters;Mar2004, Vol. 22 Issue 6, p467 

    Reports on the growing of selective gallium arsenide compound quantum wire structures by low pressure metalorganic chemical vapor deposition. Analysis of the surface and top surface morphology through scanning electron microscopy; Experiment procedure and parameters used; Revelation of the...

  • Revealing the grain structure of graphene grown by chemical vapor deposition. Nemes-Incze, Péter; Kwon Jae Yoo; Tapasztó, Levente; Dobrik, Gergely; Lábár, János; Horváth, Zsolt E.; Hwang, Chanyong; Biró, László Péter // Applied Physics Letters;7/11/2011, Vol. 99 Issue 2, p023104 

    The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent...

  • Growth of graphene from solid carbon sources. Zhengzong Sun; Zheng Yan; Jun Yao; Beitler, Elvira; Yu Zhu; Tour, James M. // Nature;11/25/2010, Vol. 468 Issue 7323, p549 

    Monolayer graphene was first obtained as a transferable material in 2004 and has stimulated intense activity among physicists, chemists and material scientists. Much research has been focused on developing routes for obtaining large sheets of monolayer or bilayer graphene. This has been recently...

  • Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films. Nayfeh, Osama M.; Glen Birdwell, A.; Tan, Cheng; Dubey, Madan; Gullapalli, Hemtej; Liu, Zheng; Leela Mohana Reddy, Arava; Ajayan, Pulickel M. // Applied Physics Letters;3/11/2013, Vol. 102 Issue 10, p103115 

    Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high...

  • Improvement of the quality of graphene-capped InAs/GaAs quantum dots. Riadh Othmen; Kamel Rezgui; Cavanna, Antonella; Hakim Arezki; Fethullah Gunes; Hosni Ajlani; Ali Madouri; Meherzi Oueslati // Journal of Applied Physics;2014, Vol. 115 Issue 21, p214309-1 

    In this paper, we study the transfer of graphene onto InAs/GaAs quantum dots (QDs). The graphene is first grown on Cu foils by chemical vapor deposition and then polymer Polymethyl Methacrylate (PMMA) is deposited on the top of graphene/Cu. High quality graphene sheet has been obtained by...

  • Large-Scale Synthesis of Graphene Films by Joule-Heating-Induced Chemical Vapor Deposition. Jung Min Lee; Hae Yong Jeong; Won Il Park // Journal of Electronic Materials;Oct2010, Vol. 39 Issue 10, p2190 

    We report large-area synthesis of few-layer graphene films by chemical vapor deposition (CVD) in a cold-wall reactor. The key feature of this method is that the catalytic metal layers on the SiO/Si substrates are self-heated to high growth temperature (900°C to 1000°C) by high-current...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics