Stress influence on band-edge luminescence properties of 4H-AlN

Cheng, Y. C.; Wu, X. L.; Li, S. H.; Chu, Paul K.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121902
Academic Journal
The band-edge luminescence properties of 4H-AlN under biaxial and uniaxial stress are studied using the first-principle method. In equilibrium, excitons B and C have energies 92 and 14 meV lower than exciton A, respectively. When the uniaxial tensile strain exceeds ∼0.95%, the top valence band is the B exciton state. Its band-edge emission is no longer prohibited and changes to E⊥c. The shift in the A exciton energy is similar to that of 2H-AlN under stress of -5 to 5 GPa. When the compressive biaxial strain is larger than 5 GPa, the band structure of 4H-AlN becomes indirect.


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