Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique

Haigui Yang; Dong Wang; Hiroshi Nakashima
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122103
Academic Journal
By back-gate metal-oxide-semiconductor field-effect transistor method, we examined acceptor concentration (NA) in nondoped SiGe-on-insulator (SGOI) substrates fabricated using Ge condensation. We found NA’s were much higher than the hole concentration (p) measured by Hall effect for low-Ge% SGOI, while NA’s were almost the same as p for high-Ge% SGOI. Such different behaviors between NA and p as a function of Ge% are closely related to the existence of deep acceptor levels (ETA) in SGOI and ETA energy shift toward valence band with increasing in Ge%, which was confirmed from the temperature dependence of p.


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