Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films

Kröger, M.; Hamwi, S.; Meyer, J.; Riedl, T.; Kowalsky, W.; Kahn, A.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p123301
Academic Journal
The electronic structures of vacuum-deposited molybdenum trioxide (MoO3) and of a typical MoO3/hole transport material (HTM) interface are determined via ultraviolet and inverse photoelectron spectroscopy. Electron affinity and ionization energy of MoO3 are found to be 6.7 and 9.68 eV, more than 4 eV larger than generally assumed, leading to a revised interpretation of the role of MoO3 in hole injection in organic devices. The MoO3 films are strongly n-type. The electronic structure of the oxide/HTM interface shows that hole injection proceeds via electron extraction from the HTM highest occupied molecular orbital through the low-lying conduction band of MoO3.


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