Electrical and thermoelectrical properties of SnTe-based films and superlattices

Ishida, Akihiro; Yamada, Tomohiro; Tsuchiya, Takuro; Inoue, Yoku; Takaoka, Sadao; Kita, Takuji
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122106
Academic Journal
SnTe-based films and superlattices (SLs) were prepared and their electrical properties were measured. A EuTe/SnTe SL exhibited a hole mobility of 2720 cm2/V s, which is the highest value reported for any semiconductor material at room temperature. The SnEuTe film also exhibited high hole mobility in contrast to the PbEuTe system. These properties are explained in terms of the band offsets of EuTe/SnTe heterojunction and a decrease in the number of Sn vacancies. In addition, SnTe/PbSe and SnTe/PbS SLs with thin SnTe layers displayed n-type conduction with Seebeck coefficients comparable to those for PbSe and PbS. These properties reflect the type II heterostructures.


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