The effect of absorber doping on electrical and optical properties of nBn based type-II InAs/GaSb strained layer superlattice infrared detectors

Myers, Stephen; Plis, Elena; Khoshakhlagh, Arezou; Kim, Ha Sul; Sharma, Yagya; Dawson, Ralph; Krishna, Sanjay; Gin, Aaron
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121110
Academic Journal
We have investigated the electrical and optical properties of a nBn based InAs/GaSb strained layer superlattice detector as a function of absorber region background carrier concentration. Temperature dependent dark current, responsivity, and detectivity were measured. The device with a nonintentionally doped absorption region demonstrated the lowest dark current density with a specific detectivity at zero bias equal to 1.2×1011 cm Hz1/2/W at 77 K. This value decreased to 6×1010 cm Hz1/2/W at 150 K. This contrasts significantly with p-i-n diodes, in which the D* decreases by over two orders of magnitude from 77 to 150 K, making nBn devices promising for higher operating temperatures.


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