In-depth resolved Raman scattering analysis of secondary phases in Cu-poor CuInSe2 based thin films

Fontané, X.; Izquierdo-Roca, V.; Calvo-Barrio, L.; Álvarez-Garcia, J.; Pérez-Rodríguez, A.; Morante, J. R.; Witte, W.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121907
Academic Journal
Raman scattering analysis of Cu-poor CuInSe2 layers shows the coexistence of the ordered vacancy compound (OVC), CuAu–CuInSe2 and chalcopyrite (CH) CuInSe2 phases as function of the Cu/In content ratio x. In-depth resolved measurements from layers with x≤0.57 show a strong inhibition in the relative intensity of the CH-CuInSe2 mode at the back region. Micro-Raman spectra directly measured at different regions from the layers with 0.66≤x≤0.71 also suggest a higher content of the OVC phase at this back region. These data suggest an enhancement in the formation of OVC at this region in the layers.


Related Articles

  • Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy. Guotong Du; Yan Ma; Yuantao Zhang; Tianpeng Yang // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p213103 

    The intrinsic p-type ZnO thin films were prepared by controlling the oxygen partial pressure during growth. The E2 (high) mode at 432.2 cm-1 appeared in the Raman spectrum of the film. The photoluminescence spectra taken at 77 K showed the emission band C in the violet region, which originated...

  • Phonon anomalies near the magnetic phase transitions in BiFeO3 thin films with rhombohedral R3c symmetry. Singh, Manoj K.; Katiyar, Ram S. // Journal of Applied Physics;Apr2011, Vol. 109 Issue 7, p07D916 

    Raman spectra of epitaxal BiFeO3 thin films, grown on (111) SrTiO3 substrates, have been studied in temperature range 300-800 K. All four prominent A1-symmetry (81, 138, 170, and 214 cm-1) Raman modes show evolution with the temperature near the Néel temperature (TN), which is interpreted due...

  • X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1-x)O3 thin films. Lappalainen, Jyrki; Lantto, Vilho; Frantti, Johannes; Hiltunen, Jussi // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p252901 

    Microstructure, film orientation, and optical transmission spectra of polycrystalline Nd-modified Pb(ZrxTi1-x)O3 films were studied as a function of film thickness. Pulsed laser deposition was used for the fabrication of films with thickness from 80 to 465 nm on single-crystal MgO(100)...

  • Electronic states in Si nanocrystal thin films. Rong Zhang; Hua Wu; Xinyi Chen; Wenzhong Shen // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242105 

    We report on the investigation of electronic states in hydrogenated nanocrystalline silicon (nc-Si:H) thin films through the electronic transitions by photocurrent measurements. Higher photocurrent response has been observed above the bulk Si band gap of 1.05 eV in the nc-Si:H films with larger...

  • Polarized Raman scattering of multiferroic BiFeO3 epitaxial films with rhombohedral R3c symmetry. Singh, Manoj K.; Jang, Hyun M.; Sangwoo Ryu; Moon-Ho Jo // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p042907 

    Highly (111)-oriented rhombohedral BiFeO3 (BFO) thin films were grown on (111) SrTiO3 substrates by pulsed laser deposition. Polarized Raman-scattering study of the (111)-oriented epitaxial BFO thin film with rhombohedral R3c symmetry was carried out by employing two distinct backscattering...

  • Acoustic modes and elastic properties of polymeric nanostructures. Hartschuh, R. D.; Kisliuk, A.; Novikov, V.; Sokolov, A. P.; Heyliger, P. R.; Flannery, C. M.; Johnson, W. L.; Soles, C. L.; Wu, W.-L. // Applied Physics Letters;10/24/2005, Vol. 87 Issue 17, p173121 

    Phonon spectra of polymeric linear nanostructures have been characterized using Brillouin light scattering. In addition to phonon modes similar to those present in uniform thin films, the phonon spectra of the nanolines reveal a new mode with a lower frequency that depends on the width of the...

  • Raman spectroscopy of nanocrystalline and amorphous GaN. Trodahl, H. J.; Budde, F.; Ruck, B. J.; Granville, S.; Koo, A.; Bittar, A. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p084309 

    We report Raman measurements on thin films of strongly disordered GaN and GaN:O prepared by ion-assisted deposition. The incident photon energies used in the experiments ranged from 1.95 to 3.8 eV, spanning the interband edge. Under subgap excitation the signal resembles the crystalline GaN...

  • Bundling dynamics of single walled carbon nanotubes in aqueous suspensions. Eda, Goki; Fanchini, Giovanni; Kanwal, Alokik; Chhowalla, Manish // Journal of Applied Physics;May2008, Vol. 103 Issue 9, p093118 

    A simple optical method based on absorption of monochromatic light to investigate the dynamics of single walled carbon nanotube (SWCNT) suspensions is described. The well dispersed suspensions display a complex behavior, exhibiting peaks due to resonant scattering from SWCNT bundles with...

  • Chromium-Induced Nanocrystallization of a-Si Thin Films into the Wurtzite Structure. Kumar, K. Uma Mahendra; Krishna, M. Ghanashyam // Journal of Nanomaterials;2008 Special Issue 2, p1 

    Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed fromX-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics