Three-dimensional simulations of a thin film heterojunction solar cell with a point contact/defect passivation structure at the heterointerface

Allsop, N.; Nürnberg, R.; Lux-Steiner, M. Ch.; Schedel-Niedrig, Th.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122108
Academic Journal
Thin film heterojunction solar cells such as those based on the chalcopyrites or amorphous silicon are often limited by interface recombination at the active heterointerface. A new strategy to overcome this limitation is described, replacing the conventional wider band gap contact material with a combination of a passivation layer plus the conventional contact in a point contact type structure. This is similar to the established method to minimize rear contact recombination in crystalline silicon solar cells. Here point contacts at the heterointerface of a CuInS2 based solar cell are modeled using the WIAS-TeSCA code. The importance of the donor defect energy level at the absorber/passivation interface is shown, and a way to improve the cell efficiency by >25% (relative) is outlined.


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