Improved precision in strain measurement using nanobeam electron diffraction

Béché, A.; Rouvière, J. L.; Clément, L.; Hartmann, J. M.
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p123114
Academic Journal
Improvements in transmission electron microscopy have transformed nanobeam electron diffraction into a simple and powerful technique to measure strain. A Si0.69Ge0.31 layer, grown onto a Si substrate has been used to evaluate the precision and accuracy of the technique. Diffraction patterns have been acquired along a <110> zone axis using a FEI-Titan microscope and have been analyzed using dedicated software. A strain precision of 6×10-4 using a probe size of 2.7 nm with a convergence angle of 0.5 mrad has been reached. The bidimensional distortion tensor in the plane perpendicular to the electron beam has been obtained.


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