Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

Martin-Bragado, Ignacio; Moroz, Victor
September 2009
Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p123123
Academic Journal
An atomistic model to account for the formation of facets during solid phase epitaxy regrowth (SPER) is shown. This model relies on a lattice kinetic Monte Carlo approach. The lattice atoms produce different crystalline planes growing with different planar velocities. In particular, the model explains the arrow tip formation during SPER of thin silicon fins typical for fin field effect transistors and the formation of trenches in rectangular-shaped amorphized regions in (001) and (011) silicon, caused by the distortion of the lattice by shear strain and propagated by (111) facets.


Related Articles

  • MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate. Chen, Yuanping; Simingalam, Sina; Brill, Gregory; Wijewarnasuriya, Priyalal; Dhar, Nibir; Kim, Jae; Smith, David // Journal of Electronic Materials;Oct2012, Vol. 41 Issue 10, p2917 

    Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Ã…, such as HgCdSe and GaSb-based type II...

  • Carbon incorporation pathways and lattice sites in Si[sub 1-y]C[sub y] alloys grown on Si(001) by molecular-beam epitaxy. Park, S. Y.; D’Arcy-Gall, J.; Gall, D.; Soares, J. A. N. T; Kim, Y.-W.; Kim, H.; Desjardins, P.; Greene, J. E.; Bishop, S. G. // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p5716 

    We use a combination of in situ and postdeposition experimental probes together with ab initio calculations of strain coefficients and formation energies associated with specific C configurations in the Si lattice to determine C incorporation pathways and lattice site distributions in fully...

  • Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs. Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261 

    This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are...

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • High-Resolution X-Ray Diffraction Studies of Molecular Beam Epitaxy-Grown HgCdTe Heterostructures and CdZnTe Substrates. Sewell, R. H.; Musca, C. A.; Dell, J. M.; Faraone, L.; Usher, B. F.; Dieing, T. // Journal of Electronic Materials;Jun2005, Vol. 34 Issue 6, p795 

    Lattice mismatch between substrates and epitaxial layers of different mole-fractions can create a variety of distortions and defects in Hg(1-x)Cd(x)Te epilayers, thus degrading the performance of infrared detectors fabricated from this material. X-ray diffraction is a sensitive nondestructive...

  • Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN. Xinqiang Wang; Song-Bek Che; Ishitani, Yoshihiro; Yoshikawa, Akihiko // Applied Physics Letters;10/23/2006, Vol. 89 Issue 17, p171907 

    Strain-free Raman frequencies of the E2 high and A1(LO) modes of hexagonal InN are determined to be 490.1±0.2 and 585.4±0.4 cm-1 by Raman measurements on a freestanding InN film grown by molecular beam epitaxy. The strain-free Raman frequencies are further confirmed by linear fits to Raman...

  • Growth and optical characterization of InAs1-xSbx(0≤x≤1) on GaAs and on GaAs-coated Si by molecular beam epitaxy. Dobbelaere, W.; De Boeck, J.; Borghs, G. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1856 

    Epitaxial layers of InAs1-xSbx(0≤x≤1) have been grown on GaAs and on GaAs-coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room-temperature transmission spectroscopy was used to measure the optical band gap of the InAs1-xSbx layers and the...

  • High-current lattice-strained In0.59Ga0.41As/In0.52Al0.48As modulation-doped field-effect transistors grown by molecular beam epitaxy. Kuang, J. B.; Chen, Y. K.; Sivco, D.; Cho, A. Y.; Eastman, L. F. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1784 

    High-current driving capability is realized in submicron-gate lattice-strained In0.59Ga0.41As/In0.52Al0.48As (Δa/a=4×10-3) modulation-doped field-effect transistors. Full-channel drain current in excess of 1.10 and 1.90 A/mm are obtained at 80 K for the singly doped and doubly doped...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics