TITLE

GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection

AUTHOR(S)
Liu, H. C.; Liu, H.C.; Song, C. Y.; Song, C.Y.; Shen, A.; Gao, M.; Wasilewski, Z. R.; Wasilewski, Z.R.; Buchanan, M.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present experimental results on quantum-well photodetectors for visible and infrared dual-band detection. Large band gap top contacts were used on a standard GaAs/AlGaAs quantum-well infrared photodetector so that visible light could reach the quantum-well region and be absorbed via interband transitions. Two designs were investigated, using a high Al fraction AlGaAs and a short period GaAs/AlAs superlattice contact layer. The dual-band response spectral regions are 0.55-0.7 and 7-10 μm. Measured responsivities are about 0.7 A/W at 8.3 μm and 0.1 A/W at 0.63 μm under -6 V bias voltage. © 2000 American Institute of Physics.
ACCESSION #
4433262

 

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