Luminescence enhancement from hydrogen-passivated self-assembled quantum dots

Le Ru, E. C.; Le Ru, E.C.; Siverns, P. D.; Siverns, P.D.; Murray, R.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
We have measured a large increase (by a factor of up to 50) in the room-temperature emission of InAs/GaAs self-assembled quantum dots subjected to a hydrogen-passivation treatment. Smaller enhancements were measured at low temperatures. We tentatively attribute the improved optical signal to passivation of defects within the GaAs matrix and wetting layer adjacent to the dots. Annealing studies show that these benefits are lost following annealing at temperatures above 600 °C for 5 min. © 2000 American Institute of Physics.


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