Faceted inversion domain boundary in GaN films doped with Mg

Romano, L. T.; Romano, L.T.; Northrup, J. E.; Northrup, J.E.; Ptak, A. J.; Ptak, A.J.; Myers, T. H.; Myers, T.H.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
Homoepitaxial GaN films, doped with Mg, were grown by rf-plasma molecular-beam epitaxy on Ga-polarity (0001) templates. Convergent-beam electron diffraction analysis establishes that the film polarity changes from [0001] to [0001_] when the Mg flux during growth is approximately 1 ML/s. Secondary ion mass spectrometry indicates a doping concentration of ∼10[sup 20] cm[sup -3] in the film where the inversion occurs, and a reduced Mg incorporation in the [0001_] material. Transmission electron microscopy shows that the inversion domain boundary is faceted predominantly along the {0001} and {h,h,-2h,l} planes, with l/h approximately equal to 3. Using first-principles total energy calculations, we show that the {h,h,-2h,l} segments of the boundary are stabilized by the incorporation of Mg in threefold coordinated lattice sites. © 2000 American Institute of Physics.


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