Molecular beam epitaxy growth of GaN on C-terminated 6H-SiC (000[OVERLINE]1[/OVERLINE]) surface

Guan, Z. P.; Guan, Z.P.; Cai, A. L.; Cai, A.L.; Cabalu, J. S.; Cabalu, J.S.; Porter, H. L.; Porter, H.L.; Huang, S.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Å, as evidenced by the x-ray diffraction full width at half maximum of 90 arc sec and 4.2 K donor-bound exciton peak width of 1.4 meV. The epilayers exhibit clear signatures of compressive strain, suggesting a more favorable growth mode than can be achieved on the Si-terminated surface. © 2000 American Institute of Physics.


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