TITLE

Improvement on epitaxial grown of InN by migration enhanced epitaxy

AUTHOR(S)
Lu, Hai; Hai Lu; Schaff, William J.; Hwang, Jeonghyun; Jeonghyun Hwang; Wu, Hong; Hong Wu; Yeo, Wesley; Pharkya, Amit; Eastman, Lester F.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial growth of InN on (0001) sapphire with an AlN buffer layer was studied by migration-enhanced epitaxy, which is composed of an alternative supply of pure In atoms and N[sub 2] plasma. A series of samples were prepared with different substrate temperatures ranging from 360 to 590 °C. As-grown films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction, atomic-force microscopy (AFM), and Hall measurements. Both XRD θ-2θ and ω scans show that the full width at half maximum of the (0002) peak nearly continuously decrease with increasing growth temperature, while InN grown at 590 °C shows the poorest surface morphology from AFM. It is suggested that three-dimensional characterization is necessary for an accurate evaluation of the quality of the InN epilayer. Hall mobility as high as 542 cm[sup 2]/V s was achieved on film grown at ∼500 °C with an electron concentration of 3x10[sup 18] cm[sup -3] at room temperature. These results argue against the common view that nitrogen vacancies are responsible for the high background n-type conductivity of InN. To illuminate the relationship between Hall mobility and carrier concentration, the electrical properties of all InN films grown recently were summarized. © 2000 American Institute of Physics.
ACCESSION #
4433225

 

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