Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers

Cheong, M. G.; Cheong, M.G.; Kim, K. S.; Kim, K.S.; Oh, C. S.; Oh, C.S.; Namgung, N. W.; Namgung, N.W.; Yang, G. M.; Yang, G.M.; Hong, C.-H.; Lim, K. Y.; Lim, K.Y.; Suh, E.-K.; Nahm, K. S.; Nahm, K.S.; Lee, H. J.; Lee, H.J.; Lim, D. H.; Lim, D.H.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
Temperature-dependent Hall effect measurements on unintentionally doped n-type GaN epilayers show that, above room temperature, the Hall-mobility values of different samples vary parallel with each other with temperature. We demonstrate that this anomaly is mainly due to a conductive layer near the GaN/sapphire interface for thin samples with low carrier density. Through trapping electrons, threading edge dislocations (TEDs) debilitate the epilayer contribution in a two-layer mixed conduction model involving the epilayer and the near-interface layer. The trapping may, in part, explain low mobility and anomalous transport in pure GaN layers. Scattering by TEDs is important only at low temperatures. © 2000 American Institute of Physics.


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