TITLE

Fowler-Nordheim hole tunneling in p-SiC/SiO[sub 2] structures

AUTHOR(S)
Chanana, R. K.; Chanana, R.K.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Pantelides, S.T.; Feldman, L. C.; Feldman, L.C.; Chung, G. Y.; Chung, G.Y.; Tin, C. C.; Tin, C.C.; Williams, J. R.; Williams, J.R.; Weller, R. A.; Weller, R.A.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the confirmed occurrence of Fowler-Nordheim hole tunneling in p-4H-SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass. © 2000 American Institute of Physics.
ACCESSION #
4433221

 

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