TITLE

Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts

AUTHOR(S)
Royea, William J.; Michalak, David J.; Lewis, Nathan S.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoconductivity decay lifetimes have been obtained for NH[sub 4]F[sub (aq)]-etched Si(111) and for air-oxidized Si(111) surfaces in contact with solutions of CH[sub 3]OH or tetrahydrofuran (THF) containing either ferrocene[sup +/0] (Fc[sup +/0]), bis(pentamethylcyclopentadienyl) Fe[sup +/0], or I[sub 2]. Si surfaces in contact with electrolytes having Nernstian redox potentials >0 V versus the standard calomel electrode exhibited low effective surface recombination velocities regardless of the different surface chemistries, whereas those exposed only to N[sub 2(g)] ambients or to electrolytes containing mild oxidants showed differing rf photoconductivity decay behavior depending on their different surface chemistry. The data reveal that formation of an inversion layer, and not a reduced density of electrical trap sites on the surface, is primarily responsible for the long charge-carrier lifetimes observed for Si surfaces in contact with CH[sub 3]OH or THF electrolytes containing I[sub 2] or Fc[sup +/0]. © 2000 American Institute of Physics.
ACCESSION #
4433219

 

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