TITLE

Thin film semiconductor deposition on free-standing ZnO columns

AUTHOR(S)
Ko¨nenkamp, R.; Boedecker, K.; Lux-Steiner, M. C.; Poschenrieder, M.; Zenia, F.; Levy-Clement, C.; Wagner, S.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the deposition of a-Si:H on thin films of free-standing single crystalline ZnO columns. The ZnO columns have a height of several μm and a diameter between 100 and 200 nm. The ZnO films are prepared in electrodeposition and have considerable potential for use in photoelectric thin film devices. Morphology, electronic parameters, and basic optical behavior, such as reflectance and light trapping efficiency, are reported. Amorphous silicon is deposited on the columns as a continuous smooth film with conformal coverage. Some possibilities of using these films in devices are discussed. © 2000 American Institute of Physics.
ACCESSION #
4433216

 

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