Curie-Weiss-type law for the strain and stress effects on the dielectric response of ferroelectric thin films

Pertsev, N. A.; Pertsev, N.A.; Koukhar, V. G.; Koukhar, V.G.; Waser, R.; Hoffmann, S.; Hoffman, S.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
Variations of the dielectric properties of ferroelectric thin films with the misfit strain S[sub m] in the film/substrate system and the associated biaxial stress σ inside the film are analyzed theoretically. Calculations are performed in a mean-field approximation for the dielectric response displayed in a plate-capacitor setup by single crystalline films epitaxially grown on tensile substrates (S[sub m]>0). It is shown that, in the absence of misfit-strain-induced phase transitions, the film dielectric susceptibility η[sub 33] obeys the Curie-Weiss-type law η[sub 33](S[sub m])=ε[sub 0]K[sub S]/(S[sub m]-S[sub m][sup *]), η[sub 33](σ)=ε[sub 0]K[sub σ]/(σ-σ[sup *]). Theoretical predictions are compared with the measured stress dependence of the dielectric response of polycrystalline Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3] films grown on Pt/SiO[sub 2]/Si. The theory explains the observed dielectric behavior and predicts the existence of in-plane polarization state in this film/substrate system. © 2000 American Institute of Physics.


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