Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures

Stonas, A. R.; Stonas, A.R.; Kozodoy, P.; Marchand, H.; Fini, P.; DenBaars, S. P.; DenBaars, S.P.; Mishra, U. K.; Mishra, U.K.; Hu, E. L.; Hu, E.L.
October 2000
Applied Physics Letters;10/16/2000, Vol. 77 Issue 16
Academic Journal
A photoelectrochemical (PEC) wet-etching technique (backside-illuminated PEC) is described that utilizes the dopant or band-gap selectivity of PEC etching to fabricate deeply undercut structures. Lateral etch rates exceeding 5 μm/min have been observed, producing cantilevers in excess of 100μm in length. Dramatically different etch morphologies were noted between the frontside- and backside-illuminated etching, though dopant-dependent etch selectivities were maintained. © 2000 American Institute of Physics.


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